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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry

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Abstract

A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass analyzers is proposed. Along with the known boron-containing lines (B, BC, BC2), many lines related to cluster secondary ions BC N have been found in the mass spectrum; their intensity increases by one or two orders of magnitude when Bi3 probe ions are used. Lines BC4, BC6, BC2, and BC8 have the highest intensity (in the descending order); when they are summed, the sensitivity increases by an order of magnitude in comparison with the known mode of detecting BC2. The parameters of the boron δ-layer in single-crystal diamond films grown under optimal conditions have been measured to be unprecedented: the δ-layer width is about 2 nm, and the concentration is 6.4 × 1020 cm–3 (the boron concentrations for doped and undoped diamonds differ by four orders of magnitude).

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603087, Russia

    M. N. Drozdov, Yu. N. Drozdov & P. A. Yunin

  2. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    M. A. Lobaev

  3. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    P. A. Yunin

Authors
  1. M. N. Drozdov
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  2. Yu. N. Drozdov
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  3. M. A. Lobaev
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  4. P. A. Yunin
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Correspondence to M. N. Drozdov.

Additional information

Original Russian Text © M.N. Drozdov, Yu.N. Drozdov, M.A. Lobaev, P.A. Yunin, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 7, pp. 52–60.

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Drozdov, M.N., Drozdov, Y.N., Lobaev, M.A. et al. New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry. Tech. Phys. Lett. 44, 297–300 (2018). https://doi.org/10.1134/S106378501804003X

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  • DOI: https://doi.org/10.1134/S106378501804003X

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