Abstract
In situ stress generation and relaxation in Al0.25Ga0.75N/GaN/AlN heterostructure with an overall thickness exceeding 3 μm in the process of its growth on a 6H-SiC substrate by low-temperature plasma-assisted molecular-beam epitaxy at substrate temperatures ranging from 690 to 740°C was studied. At room temperature, AlN and GaN layers revealed residual compressive stresses of–2.3 and–0.1 GPa, respectively. This made it possible to avoid cracking during postgrowth cooling of the structure.
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Original Russian Text © D.V. Nechaev, A.A. Sitnikova, P.N. Brunkov, S.V. Ivanov, V.N. Jmerik, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 9, pp. 67–74.
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Nechaev, D.V., Sitnikova, A.A., Brunkov, P.N. et al. Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy. Tech. Phys. Lett. 43, 443–446 (2017). https://doi.org/10.1134/S106378501705008X
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DOI: https://doi.org/10.1134/S106378501705008X