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Field effect in a graphene oxide transistor for proton and electron–hole conductivities

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Abstract

Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    V. A. Smirnov, V. P. Vasil’ev & N. N. Denisov

  2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    A. D. Mokrushin

  3. Moscow State University, Moscow, 119991, Russia

    K. N. Denisova

Authors
  1. V. A. Smirnov
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  2. A. D. Mokrushin
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  3. V. P. Vasil’ev
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  4. N. N. Denisov
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  5. K. N. Denisova
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Corresponding author

Correspondence to V. A. Smirnov.

Additional information

Original Russian Text © V.A. Smirnov, A.D. Mokrushin, V.P. Vasil’ev, N.N. Denisov, K.N. Denisova, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 13, pp. 18–25.

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Smirnov, V.A., Mokrushin, A.D., Vasil’ev, V.P. et al. Field effect in a graphene oxide transistor for proton and electron–hole conductivities. Tech. Phys. Lett. 42, 671–673 (2016). https://doi.org/10.1134/S1063785016070129

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  • DOI: https://doi.org/10.1134/S1063785016070129

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