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The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

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Abstract

The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.

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Authors and Affiliations

  1. Tashkent State Technical University, 100095, Tashkent, Uzbekistan

    B. E. Umirzakov, R. Kh. Ashurov & S. B. Donaev

Authors
  1. B. E. Umirzakov
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  2. R. Kh. Ashurov
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  3. S. B. Donaev
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Correspondence to S. B. Donaev.

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Translated by O. Maslova

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Umirzakov, B.E., Ashurov, R.K. & Donaev, S.B. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface. Tech. Phys. 64, 232–235 (2019). https://doi.org/10.1134/S1063784219020269

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  • DOI: https://doi.org/10.1134/S1063784219020269

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