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Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings

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Abstract

A technology of creation of annular silicon field emitters with bilayer metal–fullerene coating has been developed and their performance has been studied. It has been shown that annular emitters with a surface area of about 0.3 cm2 provide a current up to 100–110 mA and stably operate under conditions of technical vacuum (~10–7 Torr).

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Authors and Affiliations

  1. Peter-the-Great Polytechnic University, 195251, St. Petersburg, Russia

    G. G. Sominskii, T. A. Tumareva, E. P. Taradaev & A. A. Rukavitsyna

  2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, 119333, Moscow, Russia

    M. E. Givargizov & A. N. Stepanova

Authors
  1. G. G. Sominskii
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  2. T. A. Tumareva
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  3. E. P. Taradaev
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  4. A. A. Rukavitsyna
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  5. M. E. Givargizov
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  6. A. N. Stepanova
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Corresponding author

Correspondence to G. G. Sominskii.

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Translated by V. Isaakyan

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Sominskii, G.G., Tumareva, T.A., Taradaev, E.P. et al. Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings. Tech. Phys. 64, 270–273 (2019). https://doi.org/10.1134/S106378421902021X

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  • DOI: https://doi.org/10.1134/S106378421902021X

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