Abstract
An algorithm that makes it possible to solve the inverse problem of ellipsometry aimed at determining the absorption coefficient on the basis of a single-zone ellipsometric experiment during the growth of thin semiconducting films is developed and implemented. The technique is based on analysis of the variation of ellipsometric parameters Ψ and Δ directly during the growth. The algorithm is tested in synthesis of Si/SiO2/Si(100) and Hg1 − x Cd x Te structures.
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References
A. L. Aseev, Ross. Nanotekhnol. 1, 97 (2006).
S. N. Varnakov, S. V. Komogortsev, S. G. Ovchinnikov, et al., J. Appl. Phys. 104, 094703 (2008).
R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977).
H. Fujiwara, Spectroscopic Ellipsometry: Principles and Application (Wiley, New York, 2007).
D. E. Aspenes, Thin Solid Films 233, 1 (1993).
M. V. Sukhorukova, I. A. Skorokhodova, and V. P. Khvostikov, Semiconductors 34, 56 (2000).
S. G. Yastrebov, S. K. Gordeev, M. Garriga, et al., Semiconductors 40, 829 (2000).
V. A. Shvets, N. N. Mikhailov, and S. A. Dvoretskii, Avtometriya 47(5), 13 (2011).
W. M. Duncan, S. A. Henck, J. W. Kuehne, et al., J. Vac. Sci. Technol. B 12, 2779 (1994).
S. N. Varnakov, S. V. Komogortsev, J. Bartolome, et al., Fiz. Met. Metalloved. 106, 54 (2008).
V. A. Shvets, S. I. Chikichev, D. N. Pridachin, et al., Thin Solid Films 313–314, 561 (1998).
V. A. Shvets, E. V. Spesivtsev, and S. V. Rykhlitskii, Opt. Spectrosc. 97, 483 (2004).
V. A. Shvets and S. A. Dvoretskii, and N. N. Mikhailov, Tech. Phys. 54, 1602 (2009).
N. V. Volkov, A. S. Tarasov, E. V. Eremin, et al., J. Appl. Phys. 109, 123924 (2011).
S. N. Varnakov, A. A. Lepeshev, S. G. Ovchinnikov, et al., Prib. Tekh. Eksp., No. 6, 125 (2004).
E. V. Spesivtsev, S. V. Rykhlitskii, and V. A. Shvets, “Ellipsometer,” RF Patent No. 2302623, Byull. Izobret. No. 19 (2007).
D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
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Original Russian Text © N.N. Kosyrev, V.A. Shvets, N.N. Mikhailov, S.N. Varnakov, S.G. Ovchinnikov, S.V. Rykhlitskii, I.A. Yakovlev, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 5, pp. 109–112.
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Kosyrev, N.N., Shvets, V.A., Mikhailov, N.N. et al. Ellipsometric technique for determining in situ the absorption coefficient of semiconducting nanolayers. Tech. Phys. 59, 736–739 (2014). https://doi.org/10.1134/S1063784214050144
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DOI: https://doi.org/10.1134/S1063784214050144