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Electronic Structure of Thermally Oxidized Tungsten

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Abstract

The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1s, O 2s, and W 4 f core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.

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ACKNOWLEDGMENTS

We are grateful to Helmholtz-Zentrum Berlin for the possibility of using synchrotron radiation beam.

Funding

This study was supported by the Russian Foundation for Basic Research, project no. 20-02-00370. The research project was supported by the Russian–German Laboratory at BESSY II.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    P. A. Dementev, E. V. Dementeva & M. N. Lapushkin

  2. Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany

    D. A. Smirnov

  3. Alferov University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. N. Timoshnev

Authors
  1. P. A. Dementev
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  2. E. V. Dementeva
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  3. M. N. Lapushkin
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  4. D. A. Smirnov
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  5. S. N. Timoshnev
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Correspondence to M. N. Lapushkin.

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Translated by A. Sin’kov

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Dementev, P.A., Dementeva, E.V., Lapushkin, M.N. et al. Electronic Structure of Thermally Oxidized Tungsten. Phys. Solid State 63, 1153–1158 (2021). https://doi.org/10.1134/S1063783421080072

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