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Exciton-Phonon Stimulated Emission in ZnO Crystalline Film at Room Temperature

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Abstract

The near-edge luminescence of zinc oxide epitaxial film grown via molecular-beam epitaxy on a sapphire substrate is studied. Upon an increase in optical excitation at room temperature, the luminescence spectrum changes radically and a new band appears with a maximum of ~3.17 eV. It has features of stimulated emission, i.e., a threshold of nonlinear growth and a narrowing of the half-width. A model of a one-dimensional amplifier and experimental data were used to calculate the gain spectrum, with maximal value being about 170 cm–1. The theoretical approaches to calculate the Mott concentration were analyzed. It is shown for the first time that the observed stimulated emission near the threshold intensity originates from the second phonon replica of the exciton.

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Notes

  1. In our calculation, the screening of electrons and holes with the same concentrations by two charged subsystems was taken into account.

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ACKNOWLEDGMENTS

The research was carried on the equipment of the resource centers “Optical and Laser Methods for Study of Substance,” “Nanotechnology,” and “X-ray Diffraction Methods of Research” of the Science Park at St. Petersburg State University. The sample was kindly provided by S.V. Ivanov’s laboratory staff at the Ioffe Physical-Technical Institute of the Russian Academy of Sciences.

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  1. St. Petersburg State University, St. Petersburg, Russia

    N. N. Vasilyev, E. N. Borisov & B. V. Novikov

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  1. N. N. Vasilyev
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Vasilyev, N.N., Borisov, E.N. & Novikov, B.V. Exciton-Phonon Stimulated Emission in ZnO Crystalline Film at Room Temperature. Phys. Solid State 62, 1774–1779 (2020). https://doi.org/10.1134/S1063783420100352

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