Abstract
The thermal conductivity of AlxGa1 – xN/GaN heterostructures (0.05 ≤ x ≤ 1) fabricated on sapphire by molecular beam epitaxy is measured. The thermal conductivities of thin AlxGa1 – xN and GaN films at room temperature are found. We analyze the concentration dependence of thermal conductivity using a virtual crystal model for thermal conductivity. A numerical model with a localized heat source is built to model heat transfer in the considered structure, and the layer thicknesses optimal for achieving a high thermal conductivity of the structure of interest are identified.
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Funding
The work was partly supported by National Research Center “Kurchatov Institute” (structure fabrication and thermal conductivity measures) and the Russian Foundation for Basic Research, grant no. 19-07-00229 (thermal conductivity studies).
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Translated by A. Kukharuk
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Chernodubov, D.A., Maiboroda, I.O., Zanaveskin, M.L. et al. Specifics of Heat Transfer in AlxGa1 – xN/GaN Heterostructures on Sapphire. Phys. Solid State 62, 722–726 (2020). https://doi.org/10.1134/S106378342004006X
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DOI: https://doi.org/10.1134/S106378342004006X