Abstract
For the first time, the process of growing a CdTe crystal by the modified Obreimov–Shubnikov method using the technique of self-nucleation from the initial cooling temperature (1100°C) to the time of reaching the stationary growth mode is simulated. The motion of the crystallization front during crystal growth is calculated. The results are confirmed by the X-ray topography method with use of synchrotron rad-iation.
Similar content being viewed by others
REFERENCES
M. Azoulay, A. Raizman, G. Gafni, and M. Roth, J. Cryst. Growth 101, 256 (1990).
Yu. M. Ivanov, J. Cryst. Growth 194, 509 (1998).
Yu. M. Ivanov, A. N. Polyakov, M. D. Zenkova, and V. M. Kanevskii, RF Patent No. RU51030 U1 (2006).
M. D. Pavlyuk, V. M. Kanevsky, V. F. Dvoryankin, A. A. Kudryashov, A. G. Petrov, and Yu. M. Ivanov, Nucl. Instrum. Methods Phys. Res., Sect. A 624, 482 (2010).
Osamu Oda, Compound Semiconductor Bulk Materials and Characterizations (World Scientific, Singapore, 2007).
Funding
This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the State assignment for Federal Research Center Crystallography and Photonics of the Russian Academy of Sciences.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflicts of interest.
Additional information
Translated by O. Kadkin
Rights and permissions
About this article
Cite this article
Pavlyuk, M.D., Sukhanova, E.A., Zykova, M.P. et al. Mathematical Simulation of the Process of Growing a CdTe Single Crystal by the Obreimov–Shubnikov Method. Phys. Solid State 62, 1–7 (2020). https://doi.org/10.1134/S1063783420010254
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783420010254