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Mathematical Simulation of the Process of Growing a CdTe Single Crystal by the Obreimov–Shubnikov Method

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Abstract

For the first time, the process of growing a CdTe crystal by the modified Obreimov–Shubnikov method using the technique of self-nucleation from the initial cooling temperature (1100°C) to the time of reaching the stationary growth mode is simulated. The motion of the crystallization front during crystal growth is calculated. The results are confirmed by the X-ray topography method with use of synchrotron rad-iation.

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Funding

This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the State assignment for Federal Research Center Crystallography and Photonics of the Russian Academy of Sciences.

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Correspondence to M. D. Pavlyuk.

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The authors declare that they have no conflicts of interest.

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Translated by O. Kadkin

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Pavlyuk, M.D., Sukhanova, E.A., Zykova, M.P. et al. Mathematical Simulation of the Process of Growing a CdTe Single Crystal by the Obreimov–Shubnikov Method. Phys. Solid State 62, 1–7 (2020). https://doi.org/10.1134/S1063783420010254

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  • DOI: https://doi.org/10.1134/S1063783420010254

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