Abstract
Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A3B5: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm2, the hole concentration in GaAs: Mn layers increases to 3 × 1020 cm–3. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.
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Original Russian Text © O.V. Vikhrova, Yu.A. Danilov, B.N. Zvonkov, A.V. Zdoroveishchev, A.V. Kudrin, V.P. Lesnikov, A.V. Nezhdanov, S.A. Pavlov, A.E. Paraffin, I.Yu. Pashenkin, S.M. Plankina, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 11, pp. 2130–2134.
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Vikhrova, O.V., Danilov, Y.A., Zvonkov, B.N. et al. Modification of the properties of ferromagnetic layers based on A3B5 compounds by pulsed laser annealing. Phys. Solid State 59, 2150–2154 (2017). https://doi.org/10.1134/S1063783417110324
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DOI: https://doi.org/10.1134/S1063783417110324