Abstract
The ac conductivity of Bi12TiO20: Ru crystals has been studied in the frequency range 102–106 Hz and at temperatures 293–773 K. The experimental data have been analyzed in the framework of the model of correlated barrier hops. In this material, the potential barriers are due to the existence of a block structure, crystal lattice defects, and also the presence of a ruthenium impurity. The microparameters characterizing the charge transfer in doped bismuth titanate single crystals have been determined.
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M. G. Kisteneva, E. S. Khudyakova, S. M. Shandarov, A. S. Akrestina, V. G. Dyu, and Yu. F. Kargin, Kvantovaya Elektron. (Moscow) 45, 685 (2015).
V. K. Malinovskii, O. A. Gudaev, V. A. Gusev, and S. I. Demenko, Photoinduced Phenomena in Sillenites (Nauka, Novosibirsk, 1990) [in Russian].
Yu. F. Kargin, V. I. Burkov, A. A. Mar’in, and A. V. Egorysheva, Crystals Bi12MxO20 with Sillenite Structure: Synthesis, Structure, Properties (Bukva, Moscow, 2004) [in Russian].
T. V. Panchenko and K. Yu. Strelets, Phys. Solid State 51 (2), 292 (2009).
V. Belruss, J. Kalnajs, and A. Linz, Mater. Res. Bull. 6, 899 (1971).
V. Marinova, S. H. Lin, V. Sainov, M. Gospodinov, and K. Y. Hsu, J. Opt. A 5, S500 (2003).
V. B. Vainshtein, L. M. Indenbom, and V. M. Fridkin, Modern Crystallography, Vol. 2: Structure of Crystals (Nauka, Moscow, 1979, Springer-Verlag, Berlin, 1994).
R. N. Bekimbetov, Inorg. Mater. 38 (8), 795 (2002).
V. V. Pasynkov and V. S. Sorokin, Electronic Engineering Materials (Vysshaya Shkola, Moscow, 1986) [in Russian].
A. Yu. Kudzin, S. N. Plyaka, and G. Kh. Sokolyanskii, Phys. Solid State 42 (5), 861 (2000).
V. Marinova and E. Goovaerts, Bulg. Chem. Commun. 45, 218 (2013).
G. E. Pike, Phys. Rev. 6, 1572 (1972).
S. R. Elliott, Philos. Mag. 36, 1291 (1977).
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979, Springer-Verlag, Berlin, 1984).
M. Pollak, Philos. Mag. 23, 519 (1971).
V. T. Avanesyan and K. I. Paima, Phys. Solid State 58 (8), 1560 (2016).
N. Mott and E. Davis, Electronic Processes in Non- Crystalline Materials (Clarendon, Oxford, 1971; Mir, Moscow, 1982).
V. T. Avanesyan and M. P. Sevryugina, in Proceedings of the International Scientific and Technical Conference “Intermatic-2012,” Moscow, December 3–7, 2012, Part 2, p. 124.
M. Pollak, Phys. Rev. 122, 1742 (1961).
A. Lima and M. Lalic, J. Phys.: Condens. Matter. 25, 495505 (2013).
V. T. Avanesyan and N. M. Abramova, Phys. Solid State 57 (11), 2170 (2015).
V. T. Avanesyan and N. M. Abramova, Phys. Solid State 57 (6), 1100 (2015).
V. Marinova, Mei-Li Hsieha, Shiuan Huei Linb, and Ken Yuh Hsu, Opt. Commun. 203, 377 (2002).
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Original Russian Text © V.T. Avanesyan, K.I. Paima, V.M. Stozharov, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 6, pp. 1056–1059.
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Avanesyan, V.T., Paima, K.I. & Stozharov, V.M. Electron transfer in the structure of a photorefractive doped Bi12TiO20: Ru crystal. Phys. Solid State 59, 1076–1079 (2017). https://doi.org/10.1134/S1063783417060026
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DOI: https://doi.org/10.1134/S1063783417060026