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Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method

  • Surface Physics and Thin Films
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Abstract

The structural, optical, and electrical properties of p-type Cu2SnS3 thin films produced by the deposition of a dimethylsulfoxide-based sol gel solution using the centrifugation on substrates with subsequent heat treatment of the layers formed have been studied. The conditions of formation of the films using low-temperature short-time treatments in open atmosphere and a final annealing in a low vacuum (0.1 Pa) have been analyzed. The crystallite sizes D ~ 42 nm in the polycrystalline films have been found using X-ray phase analysis. Their compositions have been confirmed using the Raman spectra and the energy-dispersive X-ray analysis. The optical forbidden band width of direct allowed (E g d ~ 1.25 eV) and direct forbidden (E g df ≈ 0.95 eV) optical transitions have been determined as a result of the light transmission and absorption. Based on the study of the electrical properties using a model of polycrystalline materials, the validity of the produced films with resistivity ρ ≈ 0.21 Ω cm, the hole concentration p 0 ≈ 1.75 × 1019 cm–3, and the effective mobility μ p ≈ 1.67 cm2/(V s) for manufacturing solar cells.

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Authors and Affiliations

  1. Yuriy Fedkovych Chernivtsi National University, ul. Kotsjubynskogo 2, Chernivtsi, 58012, Ukraine

    I. G. Orletskii, M. N. Solovan, P. D. Mar’yanchuk & E. V. Maistruk

  2. Politecnico di Torino, Torino, 10129, Italy

    F. Pinna, G. Cicero & E. Tresso

Authors
  1. I. G. Orletskii
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  2. M. N. Solovan
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  3. F. Pinna
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  4. G. Cicero
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  5. P. D. Mar’yanchuk
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  6. E. V. Maistruk
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  7. E. Tresso
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Correspondence to I. G. Orletskii.

Additional information

Original Russian Text © I.G. Orletskii, M.N. Solovan, F. Pinna, G. Cicero, P.D. Mar’yanchuk, E.V. Maistruk, E. Tresso, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 4, pp. 783–789.

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Orletskii, I.G., Solovan, M.N., Pinna, F. et al. Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method. Phys. Solid State 59, 801–807 (2017). https://doi.org/10.1134/S1063783417040163

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