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Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

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Abstract

The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.

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Authors and Affiliations

  1. Zaporizhzhya Institute of Economics and Information Technologies, ul. Kiyashko 16b, Zaporizhzhya, 69015, Ukraine

    V. I. Talanin & I. E. Talanin

Authors
  1. V. I. Talanin
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  2. I. E. Talanin
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Correspondence to V. I. Talanin.

Additional information

Original Russian Text © V.I. Talanin, I.E. Talanin, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 10, pp. 1977–1981.

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Talanin, V.I., Talanin, I.E. Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state. Phys. Solid State 58, 2050–2054 (2016). https://doi.org/10.1134/S1063783416100371

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  • DOI: https://doi.org/10.1134/S1063783416100371

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