Abstract
The results of growing thin epitaxial GaInSbAsPBi layers on a GaSb substrate from a liquid bismuth-containing zone in a temperature-gradient field are discussed. The composition and properties of GaInSbAsPBi/GaSb heterostructures are investigated.
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Original Russian Text © D.L. Alfimova, L.S. Lunin, M.L. Lunina, A.S. Pashchenko, S.N. Chebotarev, 2017, published in Kristallografiya, 2017, Vol. 62, No. 1, pp. 137–142.
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Alfimova, D.L., Lunin, L.S., Lunina, M.L. et al. Thin-layer GaInSbAsPBi/GaSb heterostructures obtained from liquid phase in a temperature-gradient field. Crystallogr. Rep. 62, 139–143 (2017). https://doi.org/10.1134/S1063774517010047
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DOI: https://doi.org/10.1134/S1063774517010047