Abstract
The influence of a magnetic field directed orthogonal to the easy magnetization axis (EMA) of an elliptical spin-tunnel junction based on the Ta/CoFe/CoFeB/MgO/CoFeB/Ru/CoFe/FeMn/Ta structure on the dependence of the spin-tunnel junction (STJ) resistance on the external magnetic field is considered. This dependence is calculated using the model of coherent rotation of the magnetization of the free layer. The calculation results are comparable with the experimental studies and can be used to simulate the design of magnetic field transducers based on spin-tunnel magnetoresistive nanostructures.
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Amelichev, V.V., Vasiliev, D.V., Kostyuk, D.V. et al. Study of Spin-Tunnel Junction Magnetization Using Coherent Rotation of the Free Layer Magnetization Model. Russ Microelectron 50, 420–425 (2021). https://doi.org/10.1134/S1063739721060020
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DOI: https://doi.org/10.1134/S1063739721060020