Abstract
The dependences of the thickness of the TiO2 layer formed on the TiN surface on a partial pressure (flow) of oxygen in an argon-oxygen plasma of a magnetron sputtering system are established by secondary-ion mass spectrometry. The obtained dependences can be explained using a simple phenomenological model. Based on the previous data, a general expression for the dependences of the TiO2 thickness on the annealing time and temperature, as well as the partial pressure of oxygen, are derived. It is shown that the kinetic oxidation mode changes in the investigated annealing temperature range, which requires refining the model used previously and its parameters. The results can be used to form a nanometer oxide layer of the specified thickness on the titanium nitride surface.
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REFERENCES
Suni, I., Sigurd, D., Ho, K.T., and Nicolet, M.-A., Thermal oxidation of reactively sputtered titanium nitride and hafnium nitride films, J. Electrochem. Soc.: Solid-State Sci.Technol., 1983, vol. 130, no. 5, pp. 1210–1214.
Wittmer, M., Noser, J., and Melchior, H., Oxidation kinetics of TiN thin films, J. Appl. Phys., 1981, vol. 52, no. 11, pp. 6659–6664.
Groenland, A.W., Brunets, I., Boogaard, A., Aarnink, A.A.I., Kovalgin, A.Y., and Schmitz, J., Thermal and plasma-enhanced oxidation of ALD TiN, in Proceeding of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, Veldhaven, Netherlands,2008, pp. 468–471.
Mordvintsev, V.M., Naumov, V.V., and Simakin, S.G., Secondary ion mass spectrometry study of the formation of a nanometer oxide film on a titanium nitride surface, Russ. Microelectron., 2016, vol. 45, no. 4, pp. 242–255.
Mordvintsev, V.M. and Kudryavtsev, S.E., Investigation of electrical characteristics of memory cells based on self-forming conducting nanostructures in a form of the TiN–SiO2–W open sandwich structure, Russ. Microelectron., 2013, vol. 42, no. 2, pp. 68–78.
Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Electroforming as a process in the self-formation of conducting nanostructures for the nonvolatile electrically reprogrammable memory elements, Nanotechnol. Russ., 2009, vol. 4, nos. 1–2, pp. 121–128.
Barre, P., Kinetics of Heterogeneous Processes, Paris: Gauthier-Villars, 1973.
ACKNOWLEDGMENTS
The SIMS study was carried out on a TOF.SIMS5 facility of the Center of Collective Use “Diagnostics of Micro- and Nanostructures.”
Funding
This study was supported by state assignment no. 0066-2019-0003 of the Ministry of Science and Higher Education of the Russian Federation for the Yaroslavl’ Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences.
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Translated by E. Bondareva
Abbreviations: secondary-ion mass spectrometry (SIMS), plasma-chemical treatment (PCT).
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Mordvintsev, V.M., Naumov, V.V. & Simakin, S.G. Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface. Russ Microelectron 48, 402–408 (2019). https://doi.org/10.1134/S1063739719060064
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DOI: https://doi.org/10.1134/S1063739719060064