Abstract
A schematic diagram of a single-electron transistor with a sensitive element based on a resonant tunneling nanostructure consisting of three semiconductor quantum dots is discussed. The electron density in the steady (current) mode at the structure’s output is numerically calculated using a model of the incoherent electron transport between the extreme points and metallic reservoir contacts. The dependences of the electron density on time and system parameters are obtained. It is shown that there are sets of parameters that can provide high levels of sensitivity and reliability of the external electric field measurements. An alternative optically controlled transistor circuit is proposed, in which the electron transport through the structure is supported by a resonant laser field.
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Funding
The study was carried out as part of a state task of the Ministry of Science and Higher Education of the Russian Federation for Valiev Institute of Physics and Technology, Russian Academy of Sciences, theme no. 0066-2019-0005 “Fundamental Research in the Field of Quantum Computing and Applied Development of Solid-State Elements of Quantum Computers 2019.”
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Translated by E. Bondareva
Abbreviations: quantum dot (QD), single-electron transistor (SET).
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Tsukanov, A.V. Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots. Russ Microelectron 48, 283–291 (2019). https://doi.org/10.1134/S106373971905010X
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DOI: https://doi.org/10.1134/S106373971905010X