Abstract
The effect of technetium as a component of the catalysts of the REE compounds on the decomposition process of monohydrides of silicon and germanium during the growth of epitaxial films of silicon and a silicon-germanium solid solution is found. It is demonstrated that due to the fact that the unit cell radius of technetium is 1.358 Å and is similar to the unit cell radius of the platinum-group of elements (1.37–1.38 Å), as a component of the catalysts of REE compounds, it delivers the stability of the specific catalytic activity and high level of selectivity of the decomposition of monosilane and monogermane into \({\text{SiH}}_{2}^{{{\text{**}}}}\) and \({\text{GeH}}_{2}^{{{\text{**}}}}.\) This in turn allows carrying out the process of growing epitaxial films in two stages and, in this way, improving their quality.
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Translated by G. Levina
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Kovalevskiy, A.A., Strogova, A.S., Kusnetsov, D.F. et al. Study of the Effect of Technetium as a Component of the Catalysts of the REE Compounds on the Process of Decomposition of Monohydrides of Silicon and Germanium. Russ Microelectron 48, 273–282 (2019). https://doi.org/10.1134/S1063739719050056
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DOI: https://doi.org/10.1134/S1063739719050056