Skip to main content
SpringerLink
Log in

Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

An analytic model of low-dimensional transit-time diodes and transistors for the generation and detection of THz radiation in a linear approximation with respect to an alternating electric field is developed. Thin layers of silicon and arrays of nanowires are proposed as promising structures. It is shown that the presence of ballistic (without scattering) transport is sufficient in itself for the appearance of negative conductivity, which is necessary for the generation of radiation at frequencies of the order of the inverse transit time. In the presence of scattering, the appearance of negative conductivity has a threshold character depending on the scattering intensity. However, a variable injection from the contacts (BARITT effect) causes the appearance of negative conductivity even in the case of strong scattering. The analysis shows that in the structure proposed by us the effect of the variable injection can be strong, especially when introducing an additional electrode (gate) from which an alternating current is transmitted to the antenna. In this case, a highly efficient conversion of the dc current to terahertz oscillations is provided. It is shown that the effect of the variable spatial charge on the operation of the considered structures of the transit diodes can be neglected. This justifies the proposed analytic model. The rectifying properties of the structures under study can be used as the basis for detecting THz radiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Dhillon, S.S., Vitiello, M.S., Linfield, E.H., et al., The 2017 terahertz science and technology roadmap (topical review). J. Phys. D: Appl. Phys., 2017, vol. 50, p. 043001.

    Article  Google Scholar 

  2. Fedichkin, L. and V’yurkov, V., Quantum ballistic channel as an ultrahigh frequency generator. Appl. Phys. Lett., 1994, vol. 64, pp. 2535–2536.

    Article  Google Scholar 

  3. Pilgun, A., Vyurkov, V., Fedichkin, L., Borzdov, V., and Orlikovsky, A., Terahertz oscillations from nanowires, in Proceedings of the International Conference on Micro- and Nanoelectronics, Zvenigorod, Russia, October 2012, p. P1–09.

    Google Scholar 

  4. Vyurkov, V., Svintsov, D., Pilgun, A., and Orlikovsky, A., Nanowire transit-time diodes for terahertz generation, in Proceedings of the 4th Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2015). Chernogolovka, Russia, 2015, pp. 58–59.

    Google Scholar 

  5. Khabutdinov, R., Semenikhin, I., Davydov, F., Vyurkov, V., Fedichkin, L., Rudenko, K., Borzdov, A.V., and Borzdov, V.M., Low-dimensional transit-time diodes for terahertz generation. Proc. SPIE, 2016, vol. 10224, p. 102240M.

    Article  Google Scholar 

  6. Vyurkov, V.V., Rudenko, K.V., and Lukichev, V.F., Low-dimensional transit-time diodes for terahertz generation and detection, in Proceedings of the 27th International Conference on Microwave and Telecommunication Technology CriMiCo’2017. Sevastopol, Russia, Sept. 10–16, 2017, pp. 45–52.

    Google Scholar 

  7. Miakonkikh, A.V., Tatarintsev, A.A., Rogozhin, A.E., and Rudenko, K.V., Technology for fabrication of sub- 20 nm silicon planar nanowires array. Proc. SPIE, 2016, vol. 10224, p. 102241V.

    Article  Google Scholar 

  8. Miakonkikh, A.V., Orlikovskiy, N.A., Rogozhin, A.E., Rudenko, K.V., and Tatarintsev, A.A., Dependence of the resistance of the negative e-beam resist hsq versus the dose in the RIE and wet etching processes. Russ. Microelectron., 2018, vol. 47, no. 3, pp. 157–164.

    Article  Google Scholar 

  9. Tager, A.S., The avalanche-transit diode and ist use in microwaves. Sov. Phys. Usp., 1967, vol. 9, p. 892.

    Article  Google Scholar 

  10. Coleman, D.J., Jr., transit-time oscillations in BARITT diodes. J. Appl. Phys., 1972, vol. 43, pp. 1812–1818.

    Article  Google Scholar 

  11. Shockley, W., Currents to conductors induced by a moving point charge. J. Appl. Phys., 1938, vol. 9, pp. 635–636.

    Article  Google Scholar 

  12. Ananiev, S.D., V’yurkov, V.V., and Lukichev, V.F., Surface scattering in SOI field-effect transistor. Proc. SPIE, 2006, vol. 6260, p. O–1–8.

    Google Scholar 

  13. Ryzhii, V., Satou, A., and Shur, M.S., Transit-time mechanism of plasma instability in high electron mobility transistors. Phys. Status Solidi A, 2005, vol. 202, pp. R113–R115.

    Article  Google Scholar 

  14. Petrov, A.S., Svintsov, D., Rudenko, M., Ryzhii, V., and Shur, M.S., Plasma instability of 2D electrons in a field-effect transistor with partly gated channel. Int. J. High Speed Electron. Syst., 2016, vol. 25, p. 1640015.

    Article  Google Scholar 

  15. Das Sarma, S. and Lai, W., Screening and elementary excitations in narrow-channel semiconductor microstructures. Phys. Rev. B, 1985, vol. 32, p. 1401(R).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218, Russia

    V. V. Vyurkov, R. R. Khabutdinov, A. B. Nemtsov, I. A. Semenikhin, M. K. Rudenko, K. V. Rudenko & V. F. Lukichev

Authors
  1. V. V. Vyurkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. R. Khabutdinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. B. Nemtsov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. I. A. Semenikhin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. K. Rudenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. V. Rudenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. V. F. Lukichev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. V. Vyurkov.

Additional information

Original Russian Text © V.V. Vyurkov, R.R. Khabutdinov, A.B. Nemtsov, I.A. Semenikhin, M.K. Rudenko, K.V. Rudenko, V.F. Lukichev, 2018, published in Mikroelektronika, 2018, Vol. 47, No. 5.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Vyurkov, V.V., Khabutdinov, R.R., Nemtsov, A.B. et al. Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation. Russ Microelectron 47, 290–298 (2018). https://doi.org/10.1134/S1063739718050104

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739718050104

Search

Navigation