Abstract
The results of creating a system of models and algorithms for calculating the parameters of technological processes for obtaining materials of micro- and nanoelectronics and designing equipment are considered. It is shown that the distinctive feature of the teaching methods for special technological courses in electronic engineering materials is the construction of courses by analogy with the technological processes for obtaining materials for electronics: from a bulk single crystal to instrumental structures, whose dimensions do not currently exceed several tens of nanometers. A scientific model approach to the solution of technological problems was formed in the study of heat and mass transfer processes, which together with the processes of interaction in liquids and gas, taking heterogeneous reactions into account, are the theoretical basis of the technology of electronic engineering materials. The possibilities of physical and mathematical modeling are compared. Approaches to create mathematical models of the growth processes of single crystals of semiconductors, epitaxial layers, and heterostructures are considered and the possibilities of their practical use are determined. It is determined that the ideas proposed by V.V. Krapukhin at the initial stages of training specialists in the field of the technology of electronic material and developed by his students identified the possibility of training several generations of qualified specialists.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Krapukhin, V.V., Kuznetsov, G.D., and Sokolov, I.A., Tekhnologiya materialov elektronnoi tekhniki (Technology of Electronic Materials), Moscow: Metallurgiya, 1996.
Sokolov, I.A., Raschety protsessov poluprovodnikovoi tekhnologii (Calculations of the Processes of Semiconductor Technology), Moscow: Metallurgiya, 1994.
Kozhitov, L.V., Kosushkin, V.G., Krapukhin, V.V., and Parkhomenko, Yu.N., Tekhnologiya materialov mikro-i nanoelektroniki (Technology of Materials of Microand Nanoelectronics), Moscow: MISIS, 2007.
Kozhitov, L.V., Krapukhin, V.V., and Ulybin, V.A., Tekhnologiya epitaksial'nykh geterokompozitsii (Technology of Epitaxial Heterocompositions), Moscow: MISIS, 2001.
Kosushkin, V.G., Upravlenie rostom kristallov nizkoenergeticheskimi vozdeistviyami (Control of Crystal Growth by Low-Energy Effects), Kaluga: Izd. Nauchn. Liter. N.F. Bochkarevoi, 2004.
Kozhitov, L.V., and Blinov, I.G., Oborudovanie poluprovodnikovogoproizvodstva (Semiconductor Manufacturing Equipment), Moscow: Mashinostroenie, 1986.
Skvortsov, I.M., Lapidus, I.I., Orion, B.V., Kozhitov, L.V., and Anikin, V.K., Tekhnologiya iapparaturagazovoi epitaksii kremniya i germaniya (Technology and Equipment for Gas Epitaxy of Silicon and Germanium), Moscow: Energiya, 1978.
Chernyaev, V.N., and Kozhitov, L.V., Tekhnologiya epitaksial'nykh sloev arsenida galliya i pribory na ikh osnove (Technology of Gallium Arsenide Epitaxial Layers and Devices Based on them), Moscow: Energiya, 1974.
Kozhitov, L.V., Lipatov, V.V., Timoshin, A.S., and Volkov, M.P., Zhidkofaznaya epitaksiya kremniya (Liquid-Phase Epitaxy of Silicon), Moscow: Metallurgiya, 1989.
Krapukhin, V.V., Sokolov, I.A., and Kuznetsov, G.D., Fiziko-khimicheskie osnovy tekhnologii poluprovodnikovykh materialov (Physicochemical Basis of Semiconductor Materials Technology), Moscow: MISiS, 1995.
Kozhitov, L.V., Chichenev, N.A., Emel'yanov, S.G., and Kosushkin, V.G., Tekhnologicheskoe vakuumnoe oborudovanie (Technological Vacuum Equipment), Kursk: YuZGU, 2014.
Golovatyi, Yu.P., Kosushkin, V.G., Emel'yanov, S.G., Chervyakov, L.M., Kostishin, V.G., Kozhitov, L.V., and Bebenin, V.G., Modeli i algoritmy tekhnologicheskikh protsessov polucheniya novykh materialov (Models and Algorithms of Technological Processes for Obtaining New Materials), Kursk: YuZGU, 2014.
Kosushkin, V.G., Adarchin, S.A., Kozhitov, L.V., Emel'yanov, S.G., Kostishin, V.G., Muratov, D.G., Chervyakov, L.M., and Bebenin, V.G., Raschety parametrov tekhnologicheskikh protsessov polucheniya novykh materialov (Calculations of Parameters of Technological Processes for Obtaining New Materials), Kursk: YuZGU, 2016.
Kozhitov, L.V., Emel'yanov, S.G., Kosushkin, V.G., Strel'chenko, S.S., Parkhomenko, Yu.N., Kozlov, V.V., and Kozhitov, S.L., Tekhnologiya materialov mikro-i nanoelektroniki (Technology of Materials of Microand Nanoelectronics), Kursk: YuZGU, 2012.
Karamurzov, B.S., Kozhitov, L.V., Kosushkin, V.G., Strel'chenko, S.S., and Kozhitov, S.L., Modeli, tekhnologii i oborudovanie rosta kristallov i epitaksial'nykh sloev (Models, Technologies and Equipment for the Growth of Crystals and Epitaxial Layers), Nalchik: Kab.-Balk. Univ., 2011.
Mazalov, A.V., Sabitov, D.R., Kureshov, V.A., Padalitsa, A.A., Marmalyuk, A.A., and Akchurin, R.Kh., Influence of conditions of growth on structural perfection of layers of AlN received by method MOS-gidridnoy of an epitaxy, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2013, no. 1, pp. 45–48. doi 10.17073/1609-3577-2013-1-45-48
Prostomolotov, A.I., Verezub, N.A., and Ilyasov, Kh.Kh., Remote and conjugated modeling of heat-mass transfer and defect formation in technological processes, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2015, vol. 18, no. 1, pp. 31–36. doi 10.17073/1609-3577-2015-1-31-36
Abgaryan, K.K., Volodina, O.V., and Uvarov, S.I., Mathematical modeling of point defect cluster formation in silicon based on molecular dynamic approach, Mod. Electron. Mater., 2015, vol. 1, no. 3, pp. 82–87. doi doi 10.1016/j.moem.2016.03.001
Philippov, M.M., Gribenyukov, A.I., Ginsar, V.E., and Babushkin, Yu.V., Application of mathematical model for support of crystal growth process in multizone thermal installations, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2013, no. 2, pp. 26–31. doi 10.17073/1609-3577-2013-2-26-31
Verezub, N.A., Prostomolotov, A.I., Berdnikov, V.S., and Vinokurov, V.A., Numerical and experimental study of the influence of thermal processes on the shape of solidification front in Czochralski model for heptadecane and gallium, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2014, vol. 17, no. 4, pp. 257–267. doi 10.17073/1609-3577-2014-4-257-267
Machlin, E., An Introduction to Aspects of Thermodynamics and Kinetics Relevant to Material Science, Amsterdam etc.: Elsevier, 2014.
Byrappa, K., and Ohachi, T., Crystal Growth Technology, Norwich, New York: William Andrew, 2016.
Ulrich, J., and Jones, M.J., Heat and mass transfer operations— crystallization, in Encyclopedia of the Life Support Systems, Developed under the Auspices of the UNESCO, Oxford, UK: Tolss, 1990. http://www.eols.net/.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Krapukhin, V.G. Kosushkin, L.V. Kozhitov, V.G. Kostishin, D.G. Muratov, A.V. Popkova, 2016, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Materialy Elektronnoi Tekhniki, 2016, Vol. 19, No. 3, pp. 178–187.
Rights and permissions
About this article
Cite this article
Krapukhin, V.V., Kosushkin, V.G., Kozhitov, L.V. et al. Evolution of Models and Algorithms for Calculating the Parameters of Technological Processes to Obtain Materials for Micro- and Nanoelectronics. Russ Microelectron 46, 571–579 (2017). https://doi.org/10.1134/S1063739717080091
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739717080091