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Investigation of textured aluminum nitride films prepared by chemical vapor deposition

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Abstract

Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.

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References

  1. Levinstein, M.E., Rumyantsev, S.L., and Shur, M.S., Properties of Advanced Semiconductors Materials, New York: Wiley, 2001.

    Google Scholar 

  2. Caliendo, C., Imperatori, P., and Cianci, E., Structural, morphological and acoustic properties of aln thick films sputtered on Si(001) and Si(111) substrates at low temperature, Thin Solid Films, 2003, vol. 441, pp. 32–37.

    Article  Google Scholar 

  3. Taniyasu, Y., Kasu, M., and Makimoto, T., An aluminium nitride light-emitting diode with a wavelength of 210 nanometres, Nature, 2006, vol. 441, pp. 325–328.

    Article  Google Scholar 

  4. Gudovskikh, A.S., Alvarez, J., Kleider, J.P., Afanasjev, V.P., Luchinin, V.V., Sazanov, A.P., and Terukov, E.I., Polycrystalline AlN films deposited at low temperature for selective UV detectors, Sens. Actuators A, 2004, vol. 113, pp. 355–359.

    Article  Google Scholar 

  5. Singh, N.B., Berghmans, A., Zhang, H., Wait, T., Clarke, R.C., Zingaro, J., and Golombeck, J.C., Physical vapor transport growth of large AlN crystals, J. Cryst. Growth, 2003, vol. 250, pp. 107–112.

    Article  Google Scholar 

  6. Dadgar, A., Krost, A., Christena, J., Bastek, B., Bertrama, F., Krtschil, A., Hempela, T., Blasinga, J., Haboeck, U., and Hoffmann, A., MOVPE growth of high-quality AlN, J. Cryst. Growth, 2006, vol. 297, pp. 306–310.

    Article  Google Scholar 

  7. Kumagai, Y., Yamane, T., and Koukitu, A., Growth of thick AlN layers by hydride vapor-phase epitaxy, J. Cryst. Growth, 2005, vol. 281, pp. 62–67.

    Article  Google Scholar 

  8. Pons, M., Boichot, R., Coudurier, N., Claudel, A., Blanquet, E., Lay, S., Mercier, F., and Pique, D., High temperature chemical vapor deposition of aluminum nitride, growth and evaluation, Surf. Coat. Technol., 2013, vol. 230, pp. 111–118.

    Article  Google Scholar 

  9. Red’kin, A.N., Gruzintsev, A.N., Makovei, Z.I., Tatsii, V.I., and Yakimov, E.E., Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films, Inorg. Mater., 2006, vol. 42, no. 6, pp. 627–631.

    Article  Google Scholar 

  10. Kumagai, Y., Yamane, T., and Koukitu, A., Growth of thick AlN layers by hydride vapor-phase epitaxy, J. Cryst. Growth, 2005, vol. 281, pp. 62–67.

    Article  Google Scholar 

  11. Chen, D., Xu, D., Wang, J., Zhao, B., and Zhang, Y., Thin Solid Films, 2008, vol. 517, pp. 986–989.

    Article  Google Scholar 

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia

    A. N. Red’kin, M. V. Ryzhova, E. E. Yakimov & D. V. Roshchupkin

Authors
  1. A. N. Red’kin
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  2. M. V. Ryzhova
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  3. E. E. Yakimov
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  4. D. V. Roshchupkin
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Correspondence to A. N. Red’kin.

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Original Russian Text © A.N. Red’kin, M.V. Ryzhova, E.E. Yakimov, D.V. Roshchupkin, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 1, pp. 30–33.

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Red’kin, A.N., Ryzhova, M.V., Yakimov, E.E. et al. Investigation of textured aluminum nitride films prepared by chemical vapor deposition. Russ Microelectron 46, 26–29 (2017). https://doi.org/10.1134/S1063739717010085

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  • DOI: https://doi.org/10.1134/S1063739717010085

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