Skip to main content
SpringerLink
Log in

Development and research of MIS varicaps with charge transfer

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

A new type of a double-electrode MIS varicap with a carrier transfer has been proposed. It is shown that in a device of this type, there are no negative effects associated with the processes of thermal generation and accumulation of minority carriers. This makes it possible to increase the limiting frequency and improve the temperature stability of varicap operation. Two designs of the device are considered. The characteristics of the varicaps that were measured experimentally agree with the results of the calculations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Vendik, O.V. and Parnes, M.A., Phase shifter of scanning antennas for survey areas radars, Kompon. Tekhnol., 2007, no. 9, pp. 164–166.

    Google Scholar 

  2. Siegal, B., The binary varactora new microwave device, Electron. Equip. News, 1971, vol. 12, no. 10, pp. 43–47.

    Google Scholar 

  3. Hackley, L.W., US Patent 4.903.086, 1990.

  4. Petruchuk, I.I. and Spiridonov, A.B., MOS-varactor with transfer and injection of charge, Elektron. Tekh., Ser. 10: Mikroelektron. Ustroistva, 1979, no. 2 (14), pp. 32–43.

    Google Scholar 

  5. Surin, Yu.V., Petruchuk, I.I., Nechiporenko, V.S., Surin, M.Yu., and Litsoev, S.V., RF Patent no. 100333, Byull. Izobret., 2006, no. 34.

  6. Surin, Yu.V., Petruchuk, I.I., Spiridonov, A.B., Martynova, V.P., and Litsoev, S.V., RF Patent 114807, Byull. Izobret., 2006, no. 10.

  7. Sze, S.M., Physics of Semiconductors Devices, New York: Wiley, 1981.

    Google Scholar 

  8. Zemlyannikov, N.S., Danilova, N.L., Pankov, V.V., Sukhanov, V.S., and Mihaylov, Yu. A., Tensoresistive pressure sensors on the basis of complex-profled silicon membranes, Nano-Mikrosist. Tekh., 2013, no. 4, pp. 32–36.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Federal State Unitary Enterprise Scientific Research Institute of Microdevices–K, Moscow, 124460, Russia

    Yu. V. Surin

  2. National Research University MIET, Moscow, 124498, Russia

    A. B. Spiridonov & S. V. Litsoev

Authors
  1. Yu. V. Surin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. B. Spiridonov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. V. Litsoev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. V. Litsoev.

Additional information

Original Russian Text © Yu.V. Surin, A.B. Spiridonov, S.V. Litsoev, 2015, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2015, Vol. 20, No. 4, pp. 391–396.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Surin, Y.V., Spiridonov, A.B. & Litsoev, S.V. Development and research of MIS varicaps with charge transfer. Russ Microelectron 45, 484–487 (2016). https://doi.org/10.1134/S1063739716070179

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739716070179

Keywords

Search

Navigation