Abstract
A method for the nondestructive contactless control of thickness of undoped autoepitaxial InAs layers on heavily-doped substrates by Fourier-Transform Infrared Spectroscopy (FTIR) is implemented. The studied layers are grown by the chloride-hydride epitaxy method in a vertical reactor. The thickness control method is based on the analysis of interference patterns observed in infrared reflectance spectra. Recommendations are made on the choice of the measurement spectral range optimal for the InAs structures. The choice is determined by the minimal change of the InAs refraction index, and features of reflectance of the heavily-doped substrates. A good agreement between the measurement results on the developed method and the data of metallographic analysis is shown.
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Original Russian Text © O.S. Komkov, D.D. Firsov, E.A. Kovalishina, A.S. Petrov, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki, 2014, No. 3, pp. 194–198.
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Komkov, O.S., Firsov, D.D., Kovalishina, E.A. et al. Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy. Russ Microelectron 44, 575–578 (2015). https://doi.org/10.1134/S1063739715080156
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DOI: https://doi.org/10.1134/S1063739715080156