Skip to main content
SpringerLink
Log in

Deterministic and nondeterministic failure models of LSI circuits exposed to radiation

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

Methods are proposed to estimate the relationship between probabilistic and order models for simulating functional failures of the large-scale integrated circuits (LSICs) based on Brauer’s fuzzy digital automaton and on a probabilistic automaton for reliability evaluation. In the first case, the behavior of the LSIC is determined by varying static and dynamic parameters; in the second case, by the statistical straggling of threshold failure levels.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Barbashov, V.M., Simulation of functional failures of digital systems from radiation influence, Datchiki Sistemy 2011, no. 6, pp. 29–34.

    Google Scholar 

  2. Belyakov, V.V., Chumakov, A.I., Nikiforov, A.Y., Pershenkov, V.S., Skorobogatov, P.K., and Sogoyan, A.V., Prediction of local and global ionization effects on ICs: the synergy between numerical and physical simulation, Russ. Microelectron. 2003, vol. 32, no. 2, pp. 105–118.

    Article  Google Scholar 

  3. Boruzdina, A.B., Ulanova, A.V., Grigor’ev, N.G., and Nikiforov, A.Y., Radiation-induced degradation in the dynamic parameters of memory chips, Russ. Microelectron. 2012, vol. 41, no. 4, pp. 259–265.

    Article  Google Scholar 

  4. Kalashnikov, O.A. and Nikiforov, A.Y., TID behavior of complex multifunctional VLSI devices, in Proceedings of the International Conference on Microelectronics, ICM, 2014, art. no. 6842189, pp. 455–458.

    Google Scholar 

  5. Kirgizova, A.V., Nikiforov, A.Y., Grigor’ev, N.G., Poljakov, I.V., and Skorobogatov, P.K., Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology, Russ. Microelectron. 2006, vol. 35, no. 3, pp. 162–176.

    Article  Google Scholar 

  6. Belyakov, V.V., Pershenkov, V.S., Zebrev, G.I., Sogoyan, A.V., Chumakov, A.I., Nikiforov, A.Y., and Skorobogatov, P.K., Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: a review, Russ. Microelectron. 2003, vol. 32, no. 1, pp. 25–38.

    Article  Google Scholar 

  7. Nikiforov, A.Y. and Poljakov, I.V., CMOS/SOS RAM transient radiation upset and “inversion” effect investigation, IEEE Trans. Nucl. Sci. 1996, vol. 43, no. 6, pp. 2659–2664.

    Article  Google Scholar 

  8. Petrov, A.G., Vasil’ev, A.L., Ulanova, A.V., Chumakov, A.I., and Nikiforov, A.Y., Flash memory cells data loss caused by total ionizing dose and heavy ions, Central Eur. J. Phys. 2014, vol. 12, no. 10, pp. 725–729.

    Google Scholar 

  9. Sogoyan, A.V., Chumakov, A.I., and Nikiforov, A.Yu., Method for predicting CMOS parameter degradation due to ionizing radiation with regard to operating time and conditions, Russ. Microelectron. 1999, vol. 28, no. 4, pp. 224–235.

    Google Scholar 

  10. Davydov, G.G., Sogoyan, A.V., Nikiforov, A.Y., Kirgizova, A.V., Petrov, A.G., Sedakov, A.Y., and Yashanin, I.B., Method for online nondestructive hardness assurance for CMOS LSI circuits realized in SOS technology, Russ. Microelectron. 2008, vol. 37, no. 1, pp. 62–71.

    Article  Google Scholar 

  11. Akhmetov, A.O., Boychenko, D.V., Bobrovskiy, D.V., Chumakov, A.I., Kalashnikov, O.A., Nikiforov, A.Y., and Nekrasov, P.V., System on module total ionizing dose distribution modeling, in Proceedings of the International Conference on Microelectronics, ICM, 2014, art. no. 6842156, pp. 329–331.

    Google Scholar 

  12. Denisenko, V.V., Kompaktnye modeli MOP-tranzistorov dlya SPICE v mikroi nanoelektronike (Compact MOSFET Models for SPICE in the Microand Nanoelectronics), Moscow: Fizmatlit, 2010.

    Google Scholar 

  13. Grätzer, G., General Lattice Theory, Berlin: SpringerVerlag, 1978.

    Book  Google Scholar 

  14. Fuzzy Set and Possibility Theory. Recent Developments, Yager, R.R., Ed., New York: Pergamon Press, 1982.

  15. Frank, M.J., Associativity in a class of operations on spaces of distribution functions, Aeguationes Math. 1975, vol. 12, pp. 121–144.

    Article  MATH  Google Scholar 

  16. Nechetkie mnozhestva v modelyakh upravleniya i iskusstvennogo intellekta (Fuzzy Sets in Models of Control and Artificial Intelligence), Pospelov, D.A., Ed., Moscow: Nauka, 1986.

Download references

Author information

Authors and Affiliations

  1. National Research Nuclear University (MEPhI), Moscow, Russia

    V. M. Barbashov & N. S. Trushkin

  2. OAO ENPO SPELS, Moscow, Russia

    O. A. Kalashnikov

Authors
  1. V. M. Barbashov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. S. Trushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. O. A. Kalashnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. M. Barbashov.

Additional information

Original Russian Text © V.M. Barbashov, N.S. Trushkin, O.A. Kalashnikov, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 5, pp. 355–358.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Barbashov, V.M., Trushkin, N.S. & Kalashnikov, O.A. Deterministic and nondeterministic failure models of LSI circuits exposed to radiation. Russ Microelectron 44, 312–315 (2015). https://doi.org/10.1134/S1063739715050030

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739715050030

Keywords

Search

Navigation