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Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron silicon n-channel MOS transistor

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Abstract

Using the ensemble Monte Carlo method allowing for the main features of charge-carrier transport in conditions of strong electric fields, a deep-submicron silicon n-channel MOS transistor with a channel length of 50 nm is simulated. In the Keldysh impact ionization model with a soft threshold in a channel of the simulated transistor, the effective threshold energy of this process is calculated.

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Authors and Affiliations

  1. Belarussian State University, Nezavisimosty pr. 4, Minsk, 220030, Belarus

    V. M. Borzdov, A. V. Borzdov & D. S. Speransky

  2. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117218, Russia

    V. V. V’yurkov & A. A. Orlikovsky

Authors
  1. V. M. Borzdov
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  2. A. V. Borzdov
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  3. D. S. Speransky
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  4. V. V. V’yurkov
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  5. A. A. Orlikovsky
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Correspondence to A. V. Borzdov.

Additional information

Original Russian Text © V.M. Borzdov, A.V. Borzdov, D.S. Speransky, V.V. V’yurkov, A.A. Orlikovsky, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 3, pp. 188–192.

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Borzdov, V.M., Borzdov, A.V., Speransky, D.S. et al. Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron silicon n-channel MOS transistor. Russ Microelectron 43, 189–193 (2014). https://doi.org/10.1134/S1063739714010028

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  • DOI: https://doi.org/10.1134/S1063739714010028

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