Abstract
Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th(NO3)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.
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Original Russian Text © P.V. Borisyuk, O.S. Vasil’ev, V.B. Loginov, Yu.Yu. Lebedinskii, V.I. Troyan, 2014, published in Kolloidnyi Zhurnal, 2014, Vol. 76, No. 5, pp. 560–567.
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Borisyuk, P.V., Vasil’ev, O.S., Loginov, V.B. et al. The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition. Colloid J 76, 514–521 (2014). https://doi.org/10.1134/S1061933X14050032
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DOI: https://doi.org/10.1134/S1061933X14050032