Abstract
We consider the possibility of diagnosing and predicting the reliability of semiconductor products both by the parameters of their eigen low-frequency (LF) noise and by the combined testing parameters, e.g., by the measured LF noise during electrostatic discharge and (or) thermal annealing and describe practical methods for implementation of such a possibility are described. Estimates of the reliability of the considered methods are presented. It is shown that the reliability of combined tests approaches unity.
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Gorlov, M.I., Sergeev, V.A. Testing Semiconductor Products Using Low-Frequency Noise Parameters. Russ J Nondestruct Test 58, 10–22 (2022). https://doi.org/10.1134/S1061830922010028
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DOI: https://doi.org/10.1134/S1061830922010028