Abstract
The results of studies of the morphology and photoelectric characteristics of nanostructured thin-film photoresistors based on CdxPb1 – xS obtained by modifying their composition are analyzed. The surface morphology of photosensitive elements is analyzed by scanning electron microscopy and high-resolution transmission electron microscopy. Auger-electron microscopy is used to determine the elemental composition of thin the films and the distribution of elements according to thickness. Photoresistors are prepared by physical sputtering and chemical-bath deposition from aqueous solutions with various additives. To increase the sensitivity, oxygen is introduced into films of the composition Cd0Pb1S: into physically sputtered layers by high-temperature annealing and into chemically deposited layers by the addition of oxidants. To obtain CdxPb1 – xS layers, hydrochemical deposition from an ammonium-citrate reaction mixture is used with varying concentrations of cadmium sulfate in the range of 0.01–0.1 mol/L.
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The work was supported by the Russian Foundation for Basic Research, grant no. 18-29-11 051.
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Miroshnikova, I.N., Maskaeva, L.N., Miroshnikov, B.N. et al. Modification of Nanocrystalline Films Based on Lead Sulfide. J. Surf. Investig. 17 (Suppl 1), S360–S370 (2023). https://doi.org/10.1134/S1027451023070339
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DOI: https://doi.org/10.1134/S1027451023070339