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Molecular Dynamics Simulation of Physical Sputtering of Nanoporous Silicon-Based Materials with Low Energy Argon

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Abstract—

The process of the physical sputtering of the (001) surface of continuous and nanoporous crystalline silicon by 100- and 200-eV Ar ions is simulated using the molecular dynamics method. The features of the process in porous materials are revealed. The dependences of the sputtering yield on the fluence and energies of incident ions are obtained. The structural changes under ion bombardment are described. The dissimilarity between the sputtering mechanisms for materials differing in pore radii and the degree of porosity is demonstrated.

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ACKNOWLEDGMENTS

The work was supported by the Russian Science Foundation (grant no. 14-12-01012).

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Authors and Affiliations

  1. Moscow State University, 119991, Moscow, Russia

    A. A. Sycheva & E. N. Voronina

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    A. A. Sycheva, E. N. Voronina & T. V. Rakhimova

Authors
  1. A. A. Sycheva
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  2. E. N. Voronina
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  3. T. V. Rakhimova
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Correspondence to A. A. Sycheva.

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Translated by L. Kulman

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Sycheva, A.A., Voronina, E.N. & Rakhimova, T.V. Molecular Dynamics Simulation of Physical Sputtering of Nanoporous Silicon-Based Materials with Low Energy Argon. J. Surf. Investig. 12, 1270–1277 (2018). https://doi.org/10.1134/S1027451019010191

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