Abstract
A method for determining the depth distribution of ion-implanted impurity atoms in semiconductors is developed. The method consists in measuring the concentration of impurities by X-ray fluorescence analysis upon the ellipsometry controlled removal of thin semiconductor layers. It is found that the prolonged low-energy X-ray radiation exposure of an ion-implanted semiconductor layer leads to a change in the distribution profile of the ion-implanted impurity atoms.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. I. Matyukhin, Izv. Orel State Tech. Univ., Ser. Estestv. Nauki, Nos. 1–2, 59 (2003).
V. S. Vavilov and A. R. Chelyadinskii, Usp. Fiz. Nauk 165 (3), 347 (1995).
Problems on Radiation Technology of Semiconductors, Ed. by L. S. Smirnov (Nauka, Novosibirsk, 1980) [in Russian].
Software for SPECTROSCAN MAKC-GV Spectrometer. User’s Manual (St. Petersburg, 1999) [in Russian].
A. V. Dvurechenskii and V. G. Seryapin, Preprint (Rzhanov Institute of Semiconductor Physics Siberian Branch USSR Acad. Sci., Novosibirsk, 1977).
A. V. Rzhanov, K. K. Svitashev, A. I. Semenenko, L. V. Semenenko, and V. A. Sokolov, Foundations of Ellipsometry (Nauka, Novosibirsk, 1979) [in Russian].
Sh. A. Kalmykov, Candidate’s Dissertation in Mathematics and Physics (Kabardino-Balkarian State University Named after H. M. Berbekov, Nalchik, 1986).
J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors, Silicon and Germanium (Academic Press, New York, 1970).
L. F. Burenkov, F. F. Komarov, M. A. Kumakhov, and M. M. Temkin, Parameter Tables for Spatial Distribution of Ion-Implanted Impurities (Belarusian State Univ., Minsk, 1980) [in Russian].
H. Ryssel and I. Ruge, Ionenimplantation (B. G. Teubner Verlag, Stuttgart, 1978).
L. L. Goldin and G. I. Novikova, Quantum Physics. Introductive Course (Institute Komp’yuternykh Issledovanii, Moscow, 2002) [in Russian].
L. V. Tarasov, Introduction to Quantum Optics. Student’s Book for Universities (Vysshaya Shkola, Moscow, 1987) [in Russian].
M. A. Zaikovskaya, K. R. Takhirov, and M. S. Yunusov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 10 (1), 37 (1976).
G. L. Mironchuk, G. E. Davidyuk, V. V. Bozhko, and V. N. Kazhukauskas, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 44 (5), 694 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Sh.A. Kalmykov, 2017, published in Poverkhnost’, 2017, No. 3, pp. 95–99.
Rights and permissions
About this article
Cite this article
Kalmykov, S.A. Investigation of an ion-implanted semiconductor layer by X-ray fluorescence analysis and ellipsometry. J. Surf. Investig. 11, 371–374 (2017). https://doi.org/10.1134/S1027451017020094
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451017020094