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The role of misfit dislocations in tilt boundary formation in heterosystems with nonsingular orientations

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Abstract

The structural state of Ge x Si1 − x films on miscut Si(1 1 13) substrates is studied by X-ray diffraction. Triclinic distortions that arise in the Ge x Si1 − x film are analyzed. The coincidence of the tilt axis and the miscut axis is established. Different misfit-dislocation networks that generate tilt boundaries are considered.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. V. Kolesnikov, E. M. Trukhanov, A. S. Ilin & I. D. Loshkarev

Authors
  1. A. V. Kolesnikov
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  2. E. M. Trukhanov
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  3. A. S. Ilin
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  4. I. D. Loshkarev
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Corresponding author

Correspondence to A. V. Kolesnikov.

Additional information

Original Russian Text © A.V. Kolesnikov, E.M. Trukhanov, A.S. Ilin, I.D. Loshkarev, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 7, pp. 30–33.

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Kolesnikov, A.V., Trukhanov, E.M., Ilin, A.S. et al. The role of misfit dislocations in tilt boundary formation in heterosystems with nonsingular orientations. J. Surf. Investig. 8, 647–650 (2014). https://doi.org/10.1134/S1027451014040107

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  • DOI: https://doi.org/10.1134/S1027451014040107

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