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Synthesis and properties of films in the SiO2-Bi2O3 system

  • Synthesis and Properties of Inorganic Compounds
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Abstract

The compositions of film-forming solutions for synthesizing films in the SiO2-Bi2O3 system were determined (10–90 mol % Bi2O3). The obtained films are characterized by high dielectric constants (2.43–7.89). It was demonstrated how the quantitative ratio between SiO2 and Bi2O3 in the films and powders affects their phase composition, refractive index, and dielectric constant and the acid-base properties of the surface.

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Authors and Affiliations

  1. National Research Tomsk State University, pr. Lenina 36, Tomsk, 634050, Russia

    L. P. Borilo, S. A. Kuznetsova, V. V. Kozik & A. V. Zabolotskaya

  2. Yurga Institute of Technology, Tomsk Polytechnic University, ul. Leningradskaya 26, Yurga, Kemerovo oblast, 652055, Russia

    A. G. Mal’chik & V. V. Kozik

Authors
  1. L. P. Borilo
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  2. A. G. Mal’chik
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  3. S. A. Kuznetsova
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  4. V. V. Kozik
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  5. A. V. Zabolotskaya
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Correspondence to L. P. Borilo.

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Original Russian Text © L.P. Borilo, A.G. Mal’chik, S.A. Kuznetsova, V.V. Kozik, A.V. Zabolotskaya, 2014, published in Zhurnal Neorganicheskoi Khimii, 2014, Vol. 59, No. 10, pp. 1299–1302.

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Borilo, L.P., Mal’chik, A.G., Kuznetsova, S.A. et al. Synthesis and properties of films in the SiO2-Bi2O3 system. Russ. J. Inorg. Chem. 59, 1065–1068 (2014). https://doi.org/10.1134/S0036023614100039

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  • DOI: https://doi.org/10.1134/S0036023614100039

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