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Longitudinal Magnetoresistance of Ta/Dy/Ta Nanostructures

  • ELECTRICAL AND MAGNETIC PROPERTIES
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Abstract

The Ta/Dy/Ta nanostructures are fabricated by high-vacuum magnetron sputtering. Resistance and longitudinal magnetoresistance are measured. It is shown that the observed the effect of magnetic field on resistance are due to the competition of two effects of different nature. The negative isotropic magnetoresistance in the dysprosium layer is due to the alignment of local magnetic moments in the direction of the applied magnetic field. The positive longitudinal magnetoresistance in tantalum layers is caused by a change in the conditions of scattering of electrons during the accumulation of electrons with opposite spins on opposite surfaces of the metal film with strong spin-orbit coupling.

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Funding

The work was carried out with the support of the project RSF no. 22-22-00220.

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Authors and Affiliations

  1. M.N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, 620108, Ekaterinburg, Russia

    L. I. Naumova, N. G. Bebenin, R. S. Zavornitsyn, M. A. Milyaev, I. K. Maksimova, V. V. Proglyado & V. V. Ustinov

  2. Ural Federal University, Institute of Natural Sciences and Mathematics, 620002, Ekaterinburg, Russia

    L. I. Naumova, R. S. Zavornitsyn, M. A. Milyaev & V. V. Ustinov

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  1. L. I. Naumova
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  2. N. G. Bebenin
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  3. R. S. Zavornitsyn
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  4. M. A. Milyaev
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  5. I. K. Maksimova
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  6. V. V. Proglyado
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  7. V. V. Ustinov
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Correspondence to L. I. Naumova.

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Naumova, L.I., Bebenin, N.G., Zavornitsyn, R.S. et al. Longitudinal Magnetoresistance of Ta/Dy/Ta Nanostructures. Phys. Metals Metallogr. 124, 1768–1775 (2023). https://doi.org/10.1134/S0031918X2360241X

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