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Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor

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Abstract

Nonlinear conductance along the crystallographic axis c across the layered whiskers of the TiS3 quasi-one-dimensional semiconductor has been discovered. It has been shown that the current-voltage characteristics in all three directions along the a, b, and c axes obey a power law with the exponent increasing with a decrease in temperature. Possible mechanisms of the nonlinear conductance including the motion of condensed electrons, excitation and dissociation of electron-hole pairs in two-dimensional layers, and interlayer tunneling under the conditions of the Coulomb blockade with a charge spreading over the layers are considered.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11-7, Moscow, 125009, Russia

    I. G. Gorlova, S. G. Zybtsev & V. Ya. Pokrovskii

Authors
  1. I. G. Gorlova
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  2. S. G. Zybtsev
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  3. V. Ya. Pokrovskii
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Correspondence to I. G. Gorlova.

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Original Russian Text © I.G. Gorlova, S.G. Zybtsev, V.Ya. Pokrovskii, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 100, No. 4, pp. 281–287.

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Gorlova, I.G., Zybtsev, S.G. & Pokrovskii, V.Y. Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor. Jetp Lett. 100, 256–261 (2014). https://doi.org/10.1134/S0021364014160073

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  • DOI: https://doi.org/10.1134/S0021364014160073

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