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Preparation of Diamond in the Graphite–M (M = Sn, Pb) Binary Systems: Synthesis and Structural Defects

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Abstract—

Diamond has been synthesized in the graphite–Sn and graphite–Pb systems at pressures from 8 to 9 GPa and temperatures above 1500 and 2000°C, respectively. The diamond prepared using Sn has been found to contain compressed Sn inclusions and impurity–vacancy (V) defects (SnV, NVN, and NV), and the diamond prepared in the presence of Pb contains compressed graphite and Pb inclusions and, presumably, PbV defects, evidenced by the line observed at 557 nm in its luminescence spectrum. Our experimental data confirm catalytic activity of Sn for diamond formation and demonstrate for the first time the feasibility of diamond synthesis from graphite in Pb.

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ACKNOWLEDGMENTS

We are grateful to I.P. Zibrov for his assistance with this study.

Funding

This work was supported by the Russian Science Foundation, project no. 19-12-00407.

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Correspondence to E. A. Ekimov.

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Translated by O. Tsarev

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Ekimov, E.A., Kondrin, M.V., Lyapin, S.G. et al. Preparation of Diamond in the Graphite–M (M = Sn, Pb) Binary Systems: Synthesis and Structural Defects. Inorg Mater 57, 1234–1241 (2021). https://doi.org/10.1134/S0020168521120062

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  • DOI: https://doi.org/10.1134/S0020168521120062

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