Abstract
The chemical polishing of the surface of single crystals of PbTe and Pb1 − x Sn x Te solid solutions by H2O2-HBr-tartaric acid bromine-releasing etchants has been studied for the first time under reproducible hydrodynamic conditions. The dissolution rate of the crystals has been determined as a function of etchant composition, solution stirring rate, and temperature. The polished surfaces have been examined by microstructural analysis and electron microscopy. We have located the composition boundaries of solutions for the dynamic chemical polishing of the semiconductor materials studied.
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Perevoshchikov, V.A. and Skupov, V.D., Osobennosti abrazivnoi i khimicheskoi obrabotki poverkhnosti poluprovodnikov (Abrasive and Chemical Treatments of Semiconductor Surfaces), Nizhni Novgorod: Nizhegorodsk. Gos. Univ., 1992.
Vasil’eva, L.F., Sokolova, G.A., and Shakhina, T.V., Etching behavior of PbTe and PbxSn1 − x Te substrate surfaces, Zavod. Lab., 1980, vol. 46, no. 11, pp. 1034–1035.
Barros, A.S., Abramof, E., and Rappl, P.H.O., Lead telluride p-n-junctions for infrared detection: electrical and optical characteristics, Braz. J. Phys., 2006, vol. 36, no. 2A, pp. 474–477.
Wolker, P. and Tarn, W.H., Handbook of Metal Etchants, Boca Raton: CRC Press LLC, 1991.
Tomashyk, Z.F., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., and Pavlovich, I.I., Application of H2O2-HBr bromine-releasing etchants for chemical polishing of the surface of PbTe and Pb1 − x SnxTe solid solutions, Fiz. Khim. Tverd. Tila, 2012, vol. 12, no. 4, pp. 1007–1012.
Tomashyk, Z.F., Malanych, G.P., Tomashyk, V.N., Stratiychuk, I.B., Pashchenko, G.A., and Kravtsova, A.S., Polishing of PbTe andPb1 − x SnxTe single crystals with H2O2-HBr-ethylene glycol bromine-releasing etchants, Vopr. Khim. Khim. Tekhnol., 2012, no. 4, pp. 120–125.
Malanych, G.P., Tomashyk, Z.F., Tomashyk, V.M., Stratiychuk, I.B., Safryuk, N.V., and Klad’ko, V.P., Chemical-mechanical polishing of single crystals of PbTe and Pb1 − x SnxTe solid solutions in H2O2-HBrethylene glycol etchants, Nauk. Visn. Chernivtsi Nats. Univ. Khim., 2013, no. 640, pp. 72–78.
Novik, F.S., Mints, R.S., and Malkov, Yu.S., Application of simplex lattices to constructing property-composition diagrams, Zavod. Lab., 1967, vol. 53, no. 7, pp. 840–847.
Luft, B.D., Perevoshchikov, V.A., Vozmilova, L.N., Sverdlin, I.A., and Marin, K.G., Fiziko-khimicheskie metody obrabotki poverkhnosti poluprovodnikov (Physicochemical Processing of Semiconductor Surfaces), Moscow: Radio i Svyaz’, 1982.
Perevoshchikov, V.A., Dynamic chemical polishing of semiconductor surfaces, Vysokochist. Veshchestva, 1995, no. 2, pp. 5–29.
Repinskii, S.M., Physicochemical aspect of processes on semiconductor-solution interfaces, in Nekotorye problemy fiziki i khimii poverkhnosti poluprovodnikov (Some Issues in the Physics and Chemistry of Semiconductor Surfaces), Novosibirsk: Nauka, 1972, pp. 9–72.
Perevoshchikov, V.A. and Gusev, V.K., Hydrodynamic conditions of the chemical polishing of semiconductor wafers, Zh. Prikl. Khim. (S.-Peterburg), 1970, vol. 43, no. 6, pp. 1238–1245.
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Original Russian Text © G.P. Malanych, V.N. Tomashyk, I.B. Stratiychuk, Z.F. Tomashyk, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 7, pp. 713–718.
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Malanych, G.P., Tomashyk, V.N., Stratiychuk, I.B. et al. Etching behavior of PbTe and Pb1 − x Sn x Te crystal surfaces in aqueous H2O2-HBr-tartaric acid solutions. Inorg Mater 50, 661–666 (2014). https://doi.org/10.1134/S0020168514070097
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DOI: https://doi.org/10.1134/S0020168514070097