Abstract
The kinetics of reactive ion etching of silicon in radiofrequency CHF3 plasma has been studied. It has been shown that with an increase in both power input into the discharge and bias power on the substrate holder, the etching process proceeds in the kinetic regime. It is assumed that the sources of atomic fluorine are CF3 radicals and a fluorocarbon film and the dominant ion is \({\text{CF}}_{3}^{ + }.\)
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Funding
This work was performed within the framework of state assignment for R&D studies, topic no. FZZW-2020-0007.
The study was carried out using the resources of the Center for Shared Use of Scientific Equipment of the ISUCT (with the support of the Ministry of Science and Higher Education of Russia, grant no. 075-15-2021-671).
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Translated by S. Zatonsky
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Pivovarenok, S.A., Murin, D.B. Kinetics of Silicon Etching in Trifluoromethane Plasma. High Energy Chem 56, 197–200 (2022). https://doi.org/10.1134/S0018143922020114
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DOI: https://doi.org/10.1134/S0018143922020114