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Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon

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Abstract

In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon wafers by centrifugation was studied using an indentation method. It was found that γ-irradiation led to a decrease in the specific peeling energy G of photoresist films on silicon. In this case, the IR spectra of the photoresist exhibited a decrease in the intensity of vibration bands due to the Si–O–C moiety, which is responsible for adhesion to silicon, in the course of γ-irradiation. The observed experimental results were explained taking into account the radiation-chemical and relaxation processes occurring both at the photoresist/silicon interface and in the bulk of the polymer film.

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Authors and Affiliations

  1. Polotsk State University, 214400, Novopolotsk, Belarus

    S. A. Vabishchevich & N. V. Vabishchevich

  2. Belarussian State University, 220050, Minsk, Belarus

    S. D. Brinkevich, D. I. Brinkevich & V. S. Prosolovich

Authors
  1. S. A. Vabishchevich
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  2. S. D. Brinkevich
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  3. N. V. Vabishchevich
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  4. D. I. Brinkevich
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  5. V. S. Prosolovich
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Correspondence to S. D. Brinkevich.

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Translated by V. Makhlyarchuk

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Vabishchevich, S.A., Brinkevich, S.D., Vabishchevich, N.V. et al. Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chem 55, 495–501 (2021). https://doi.org/10.1134/S0018143921060151

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  • DOI: https://doi.org/10.1134/S0018143921060151

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