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Comparison of flash-memory elements using materials based on graphene

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Abstract

Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    I. V. Antonova, I. A. Kotin & S. F. Devyatova

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    I. V. Antonova

  3. Novosibirsk State Technical University, Novosibirsk, 630073, Russia

    I. V. Antonova

  4. Scientific and Research Institute of Molecular Electronics, Moscow, 124460, Russia

    O. M. Orlov

Authors
  1. I. V. Antonova
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  2. I. A. Kotin
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  3. O. M. Orlov
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  4. S. F. Devyatova
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Correspondence to I. V. Antonova.

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Original Russian Text © I.V. Antonova, I.A. Kotin, O.M. Orlov, S.F. Devyatova, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 19, pp. 43–50.

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Antonova, I.V., Kotin, I.A., Orlov, O.M. et al. Comparison of flash-memory elements using materials based on graphene. Tech. Phys. Lett. 43, 889–892 (2017). https://doi.org/10.1134/S1063785017100029

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  • DOI: https://doi.org/10.1134/S1063785017100029

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