Abstract
The influence of the of the pore structure on the electron barrier height of Au–Al2O3 structures is experimentally studied. The porous structures of anodic aluminum oxide of two types with through pores and pores in the form of a well are investigated. It is shown that, depending on the shape of the pore profile, the deposited thin gold film creates a different height of the electron barrier at the metal-insulator interface. The method of linear optical spectroscopy showed that the height of the barrier for structures with through pores is higher by 2.0 eV.
Similar content being viewed by others
REFERENCES
A. Santos et al., TrAC Trends Anal. Chem. 44, 25 (2013).
Y. Lei et al., Prog. Mater. Sci. 52, 465 (2007).
S. Hou et al., J. Am. Chem. Soc. 126, 5674 (2004).
T. Kumeria et al., Anal. Chem. 86, 1837 (2014).
G. Sauer et al., J. Appl. Phys. 91, 3243 (2002).
E. L. Nolle, Phys. Usp. 50, 1079 (2007).
ACKNOWLEDGMENTS
The authors are grateful to Fedorov F.S. for assistance in the experimental studies of the samples.
Author information
Authors and Affiliations
Corresponding author
Additional information
The article is published in the original.
Rights and permissions
About this article
Cite this article
Ushakov, N.M., Vasil’kov, M.Y. & Shaturnuy, V.R. Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide. Semiconductors 52, 2078–2080 (2018). https://doi.org/10.1134/S1063782618160376
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782618160376