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Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique

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Abstract

Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 °C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 °C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I–V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.

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Acknowledgements

This study was supported by the Scientific and Technological Research Council of Turkey (TÜBİTAK) with a grant number of 118M041.

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Authors and Affiliations

  1. Department of Chemical Engineering, Konya Technical University, Campus, Konya, 42030, Turkey

    Mehmet Gürsoy, Emre Çıtak & Mustafa Karaman

  2. Nanotechnology and Advanced Materials Development Application and Research Center, Konya Technical University, Konya, 42250, Turkey

    Mehmet Gürsoy & Mustafa Karaman

Authors
  1. Mehmet Gürsoy
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  2. Emre Çıtak
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  3. Mustafa Karaman
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Correspondence to Mustafa Karaman.

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Gürsoy, M., Çıtak, E. & Karaman, M. Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique. Carbon Lett. 32, 781–787 (2022). https://doi.org/10.1007/s42823-021-00309-3

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  • DOI: https://doi.org/10.1007/s42823-021-00309-3

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