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β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV

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Abstract

Lateral Schottky barrier diodes (SBD) were fabricated on a molecular beam epitaxy (MBE) grown, Si-doped β-Ga2O3 wafer measuring 1 cm by 1.5 cm. These devices featured varying anode to cathode distances and included anode connected field plate structures. A device with a 25 μm anode to cathode spacing exhibited a high breakdown voltage exceeding 3.6 kV. A smaller device with a 10 μm anode to cathode spacing demonstrated a Ron,sp (specific on resistance) of 0.1508 Ω·cm2 and a power figure of merit of 18.87 MW/cm2. The incorporation of titanium, characterized by a relatively low work function, as the Schottky contact enabled the achievement of a very low turn-on voltage and a sub-60 mV/dec subthreshold swing.

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Acknowledgements

This work was supported by “The Strategic Core Material Development Program (No. 10080736)” of the Ministry of Trade, Industry & Energy (MOTIE) and the National Research Foundation (NRF) funded by the Ministry of Education (No. NRF-2020M3H4A3081798), Korea.

Funding

This work was funded by “The Strategic Core Material Development Program (No. 10080736)” of the Ministry of Trade, Industry & Energy (MOTIE) and the National Research Foundation (NRF) funded by the Ministry of Education (No. NRF-2020M3H4A3081798), Korea.

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  1. Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea

    Kyu Jun Cho, Woojin Chang, Hoon-Ki Lee & Jae Kyoung Mun

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  1. Kyu Jun Cho
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Cho, K.J., Chang, W., Lee, HK. et al. β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV. Trans. Electr. Electron. Mater. (2024). https://doi.org/10.1007/s42341-024-00529-0

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