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Investigation into the Selection of Dielectric Material using MCDM Methodologies for MEMS Switches with High Power

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Abstract

This paper presents MCDM techniques (TOPSIS and VIKOR) for determining the optimum dielectric material for MEMS technology based high power capacitive switches. These techniques are used for picking the best material from a given set of materials under some given criterion. The capacitance ratio and dielectric leakage current which are important parameters in obtaining the good RF-response of a switch have been taken into consideration along with other parameters like thermal expansion, heat dissipation and melting point for choosing the best material. Under high power condition, chosen material must have lowest value of TCE, highest possible thermal conductivity, highest melting point, along with highest value of electrical resistivity and relative permittivity for good RF response. The result of both the methods shows that AlN is the best material followed by TiO2. Kindly check and confirm the inserted country name in affiliation 1 is correcly identified. Yes, It is correct.

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Authors and Affiliations

  1. Samsung Semiconductors, Bangalore, India

    Pritam Patra

  2. E& CE Department, NIT, Hamirpur, 177005, India

    Mahesh Angira

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  1. Pritam Patra
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  2. Mahesh Angira
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Correspondence to Mahesh Angira.

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Patra, P., Angira, M. Investigation into the Selection of Dielectric Material using MCDM Methodologies for MEMS Switches with High Power. Trans. Electr. Electron. Mater. 22, 673–678 (2021). https://doi.org/10.1007/s42341-020-00282-0

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  • DOI: https://doi.org/10.1007/s42341-020-00282-0

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