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Incorporation of ZnO Nanoparticles on Solution Processed Zinc Oxide Thin-Film Transistors

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Abstract

In this work, a simple, low-cost and reliable method for deposition of solution-processed Zinc oxide films with embedded ZnO nanoparticles (np-ZnO) at low deposition temperature is presented. The np-ZnO films are obtained by ultrasonic spray pyrolysis technique at 200 °C. The np-ZnO precursor solution is prepared at different nanoparticles content. After deposition, the np-ZnO films do not require any additional treatment. The np-ZnO films were characterized by Fourier transform infrared spectroscopy, X-ray diffraction and field emission scanning electron microscope. Moreover, a comparison of ZnO and np-ZnO based thin-film transistors (TFTs) is presented. The extracted field-effect mobility was 0.01 cm2/Vs for ZnO TFTs and 0.05 cm2/Vs for np-ZnO TFTs.

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Acknowledgments

This work was supported by VIEP-BUAP [Grant No. DJMA-EXC17-G].

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Authors and Affiliations

  1. Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), 72570, Puebla, Mexico

    Miguel A. Dominguez, Javier Martinez, Karim Monfil-Leyva & Susana Soto

  2. Departamento de Electronica, Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), 72840, Puebla, Mexico

    Netzahualcoyotl Carlos & Mario Moreno

Authors
  1. Miguel A. Dominguez
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  2. Javier Martinez
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  3. Karim Monfil-Leyva
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  4. Susana Soto
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  5. Netzahualcoyotl Carlos
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  6. Mario Moreno
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Correspondence to Miguel A. Dominguez.

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Dominguez, M.A., Martinez, J., Monfil-Leyva, K. et al. Incorporation of ZnO Nanoparticles on Solution Processed Zinc Oxide Thin-Film Transistors. Trans. Electr. Electron. Mater. 19, 412–416 (2018). https://doi.org/10.1007/s42341-018-0063-3

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  • DOI: https://doi.org/10.1007/s42341-018-0063-3

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