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Cutting-Based Single Atomic Layer Removal Mechanism of Monocrystalline Copper: Atomic Sizing Effect

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Abstract

This study aims to gain an in-depth understanding of atomic and close-to-atomic scale (ACS) cutting mechanism, through an investigation of a typical diamond–copper cutting system using molecular dynamics modeling. The fundamentals in the ACS cutting process towards single atomic layer removal are emphatically analyzed. The results indicate that cutting-based single atomic layer removal could be enabled on a Cu(111) surface, achieving minimum chip thickness to single atomic layer. The material removal during ACS cutting is greatly influenced by atomic sizing effect, mainly depending on the ratio of cutting depth to atomic radius. When the ratio is larger than one threshold value, plastic material removal could be realized with chip formation, and it is dominated by shear stress-driven dislocation motion, which is different from shearing-driven chip formation in conventional cutting and the extrusion-dominated chip formation in nanocutting. This study also shows that only elastic deformation occurs on the workpiece surface during ACS cutting.

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Acknowledgements

The authors would like to acknowledge the support received from the Science Foundation Ireland (SFI) (No. 15/RP/B3208) and ‘111’ project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014).

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Authors and Affiliations

  1. Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin, Ireland

    Wenkun Xie & Fengzhou Fang

  2. State Key Laboratory of Precision Measuring Technology and Instruments, Centre of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin, China

    Fengzhou Fang

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  1. Wenkun Xie
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  2. Fengzhou Fang
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Correspondence to Fengzhou Fang.

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Xie, W., Fang, F. Cutting-Based Single Atomic Layer Removal Mechanism of Monocrystalline Copper: Atomic Sizing Effect. Nanomanuf Metrol 2, 241–252 (2019). https://doi.org/10.1007/s41871-019-00045-3

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  • DOI: https://doi.org/10.1007/s41871-019-00045-3

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