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Electrostatic Gate Control in Molecular Transistors

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Abstract

Molecular transistors, in which single molecules serve as active channel components in a three-terminal device geometry, constitute the building blocks of molecular scale electronic circuits. To demonstrate such devices, a gate electrode has been incorporated in several test beds of molecular electronics. The frontier orbitals’ alignments of a molecular transistor can be delicately tuned by modifying the molecular orbital energy with the gate electrode. In this review, we described electrostatic gate control of solid-state molecular transistors. In particular, we focus on recent experimental accomplishments in fabrication and characterization of molecular transistors.

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Fig. 9

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Fig. 10

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Acknowledgement

This work was supported by the National Research Foundation of Korea (2016R1D1A1B03935647).

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  1. Department of Applied Physics, Kyung Hee University, Yongin, 446-701, South Korea

    Hyunwook Song

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Correspondence to Hyunwook Song.

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This article is part of the Topical Collection “Molecular-Scale Electronics: Current Status and Perspective”; edited by Xuefeng Guo.

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Song, H. Electrostatic Gate Control in Molecular Transistors. Top Curr Chem (Z) 376, 37 (2018). https://doi.org/10.1007/s41061-018-0215-2

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