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Dispersion, Threshold and Gain Characteristics of Brillouin Scattered Stokes Mode in Ion-Implanted Semiconductor Quantum Plasmas

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Abstract

The dispersion, threshold, and gain characteristics of the Brillouin scattered Stokes mode (BSSM) in ion-implanted semiconductor quantum plasmas are analytically investigated using coupled mode theory. Taking into account that the origin of stimulated Brillouin scattering lies in nonlinear induced polarisation of the medium, expressions are derived for complex effective Brillouin susceptibility (due to electrons and implanted colloids) and consequently the threshold pump amplitude and the gain constant of BSSM. Inclusion of quantum effects (QEs) is done via quantum correction term in the hydrodynamic model of semiconductor plasmas. QEs modify the dispersion, threshold and gain characteristics of BSSM in ion-implanted semiconductor plasmas. In contrast to the threshold and gain characteristics of BSSM, which are impacted only by electrons and are unaffected by implanted charged colloids, the Brillouin susceptibility caused by implanted colloids has a significant impact on the dispersion characteristics of BSSM. Finally, an extensive numerical study of the n-InSb/CO2 laser system is performed for two different cases: (i) without QEs and (ii) with QEs. In both cases, the analysis offers two achievable resonances, at which the changes of sign as well as an enhancement of real part of effective Brillouin susceptibility and an enhancement of effective Brillouin gain constant are obtained. When QEs are included in the analysis, the entire spectrum shifts towards decreased levels of electron and colloidal carrier concentration.

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Acknowledgements

For many insightful suggestions, the authors are very grateful to Prof. M.R. Perrone, International Centre for Theoretical Physics, Italy and Prof. S.K. Ghoshal, Universiti Teknologi, Malaysia.

Funding

No funding was received to carry out this research work.

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Authors and Affiliations

  1. Department of Physics, Baba Mastnath University, Asthal Bohar, Rohtak, 124021, India

    Pravesh & Sunita Dahiya

  2. Department of Physics, Rajiv Gandhi Government College for Women, Bhiwani, 127021, India

    Navneet Singh

  3. Department of Physics, Government College, Matanhail, Jhajjar, 124106, India

    Manjeet Singh

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  1. Pravesh
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  2. Sunita Dahiya
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  3. Navneet Singh
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  4. Manjeet Singh
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Contributions

P and SD developed the theoretical formulation. NS and MS performed the numerical analysis. All the authors contributed equally to the preparation of the manuscript.

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Correspondence to Manjeet Singh.

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The authors declare that: The manuscript has not been submitted to more than one journal for simultaneous consideration. The submitted work is original and has not been published elsewhere in any form or language. A single study has not been split up into several parts to increase the quantity of submissions and submitted to various journals or to one journal over time. Results have been clearly, honestly, and without fabrication, falsification or inappropriate data manipulation. Authors adhere to discipline-specific rules for acquiring, selecting and processing data. No data, or theories by others have been presented. Proper acknowledgements to the other works have been given.

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Pravesh, Dahiya, S., Singh, N. et al. Dispersion, Threshold and Gain Characteristics of Brillouin Scattered Stokes Mode in Ion-Implanted Semiconductor Quantum Plasmas. Iran J Sci 48, 757–769 (2024). https://doi.org/10.1007/s40995-023-01575-8

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  • DOI: https://doi.org/10.1007/s40995-023-01575-8

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