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Selective growth of GaN on slope cone-shaped patterned sapphire substrate

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Abstract

Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China

    Dechao Yang, Yuchun Chang, Yuantao Zhang & Guotong Du

  2. Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian, 116024, P. R. China

    Dechao Yang

  3. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, P. R. China

    Hongwei Liang, Yu Qiu, Pengchong Li, Yang Liu, Rensheng Shen, Xiaochuan Xia & Guotong Du

  4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China

    Hongwei Liang

  5. Zhejiang Crystal-optech Co., Ltd., Taizhou, 318015, P. R. China

    Zhennan Yu

Authors
  1. Dechao Yang
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  2. Hongwei Liang
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  3. Yu Qiu
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  4. Pengchong Li
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  5. Yang Liu
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  6. Rensheng Shen
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  7. Xiaochuan Xia
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  8. Zhennan Yu
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  9. Yuchun Chang
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  10. Yuantao Zhang
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  11. Guotong Du
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Corresponding author

Correspondence to Yuantao Zhang.

Additional information

Supported by the National Natural Science Foundation of China(Nos.61223005, 61376046), the Program for New Century Excellent Talents in University of China(Nos.NCET-12-0236, NCET-13-0254), the Science and Technology Developing Project of Jilin Province, China (No.20130204032GX) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory in the Fifth Electronics Research Institute of Ministry of Industry and Information Technology of China(No.ZHD201204).

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Yang, D., Liang, H., Qiu, Y. et al. Selective growth of GaN on slope cone-shaped patterned sapphire substrate. Chem. Res. Chin. Univ. 30, 556–559 (2014). https://doi.org/10.1007/s40242-014-3556-6

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  • DOI: https://doi.org/10.1007/s40242-014-3556-6

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