Abstract
The transformation of charge polarity at HfO2/GaN interfaces was investigated through the post-deposition annealing (PDA) at 500 °C, 700 °C and 900 °C for 3 min. The change in surface property of atomic-layer deposition HfO2/GaN with the PDA conditions was estimated by a contact angle measurement. The PDA improved surface adhesion and thus decreased the contact angle of HfO2, which was shown with the PDA up to 700 °C. The increased contact angle with the PDA at 900 °C was presumably due to the transformation of crystallinity of HfO2 film from amorphous to polycrystalline. The charge polarity at the HfO2/GaN interfaces was changed from negative to positive with the elevated PDA temperature. The energy band bending at the HfO2/GaN interfaces was described based on the elemental binding energy obtained by X-ray photoelectron spectroscopy. The charge polarity at the HfO2/GaN interface was converted at the 700 °C PDA with increased net charge density. The PDA affected the interface property of HfO2/GaN and determined the interface polarity and charge density.
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Acknowledgements
We thank H. Park, M. Sung, and H. Sung for data calculation and discussion. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (RS-2023-00277760 and 2020R1F1A1066175).
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Han, Y., Go, J.M., Yang, K. et al. Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing. J. Korean Phys. Soc. 84, 362–367 (2024). https://doi.org/10.1007/s40042-024-01017-7
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DOI: https://doi.org/10.1007/s40042-024-01017-7